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| NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built-In Base-Emitter Shunt Resistor Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 30mA, IB = 0, Note 2 ICEO ICBO IEBO VCE = 50V, IB = 0 VCB = 100V, IE = 0 VBE = 5V 100 - - - - - - - - 2.0 1.0 2.0 V mA mA mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Delay Time Rise Time Storage Time Fall Time hFE VCE(sat) VBE(sat) td tr ts tf IC = 5A, VCE = 4V IC = 10A, VCE = 4V IC = 5A, IB = 10mA IC = 10A, IB = 40mA IC = 10A, IB = 40mA VCC = 30V, IC = 5A, IB = 20mA, Duty Cycle 2%, IB1 = IB2, RC & RB Varied, TJ = +25C Switching Characteristics (Resistive Load) - - - - 0.15 0.55 2.5 2.5 - - - - s s s s 1000 500 - - - - - - - - - - 2.0 3.0 3.5 V V V Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. NTE270 C B B NTE271 C E .600 (15.24) .060 (1.52) .173 (4.4) C E .156 (3.96) Dia. B C E .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
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